PART |
Description |
Maker |
M5M51016BRT-10L-I M5M51016BRT-10LL-I M5M51016BRT-7 |
1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM 1048576位(65536字由16位)的CMOS静态RAM From old datasheet system 1048576-1048576-BIT CMOS STATICRAM 1048576-BIT(65536-WORD BY 16-BIT) CMOS STATIC RAM
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Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
M5M4V4405CTP-7S M5M4V4405CTP-6S |
EDO (HYPER PAGE MODE) 4194304-BIT(1048576-WORD BY 4-BIT) DYNAMIC RAM 江户(超页模式)4194304位(1048576 - Word4位)动态随机存储器
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Mitsubishi Electric, Corp.
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M5M51016BRT-12VL-I M5M51016BRT-12VLL-I M5M51016BTP |
Octal D-Type Transparent Latches With 3-State Outputs 20-TSSOP -40 to 85 From old datasheet system 1048576-BIT CMOSSTATIC RAM 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
M5M51008CFP M5M51008CKR-55 M5M51008CKR-55X M5M5100 |
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM 1048576位(131072 - Word位)的CMOS静态RAM 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM 1048576位(131072 - Word位)的CMOS静RAM Octal D-Type Transparent Latches With 3-State Outputs 20-SSOP -40 to 85
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric, Corp.
|
M5M51008BKR-10L M5M51008BKR-10LL M5M51008BKR-55L M |
128K X 8 STANDARD SRAM, 100 ns, PDSO32 1048576-bit (131072-word by 8-bit) CMOS static SRAM 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM 1048576位(131072 - Word位)的CMOS静态RAM 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM 1048576位(131072 - Word位)的CMOS静RAM 128K X 8 STANDARD SRAM, 70 ns, PDSO32
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric, Corp.
|
TC514400J |
1048576 Word x 4 Bit DRAM
|
Toshiba
|
MH1S64CWXTJ-1539 MH1S64CWXTJ-12 MH1S64CWXTJ-15 MH1 |
67108864-BIT (1048576-WORD BY 64-BIT)SynchronousDRAM From old datasheet system
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
M5M4V64S40ATP-10L M5M4V64S40ATP-8 M5M4V64S40ATP-8A |
64M (4-BANK x 1048576-WORD x 16-BIT) Synchronous DRAM
|
Mitsubishi Electric Corporation
|
HM5118165A HM5118165AJ-7 HM5118165AJ-8 HM5118165AT |
1048576-word x 16-bit Dynamic Random Access Memory
|
HITACHI[Hitachi Semiconductor]
|
HM5118160B HM5118160BJ-6 HM5118160BJ-7 HM5118160BJ |
1048576-word x 16-bit Dynamic Random Access Memory
|
Hitachi Semiconductor
|
TMS46400 TMS46400P |
<font color=red>[Old version datasheet]</font> 1048576-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORIES
|
TI store
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